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 FFP15S60S — STEALTH? II Diode www.fairchildsemi.com 3 Typical Performance Characteristics Figure 4. Typical Reverse Current Figure 3. Typical Forward Voltage Drop vs. F orward C urrent vs. R everse V oltage Figure 6. Typical Reverse Recovery Time vs. diF/dt Figure 7. Typical Reverse Recovery Current vs. diF/dt 0.1 01234 1 10 TC = 75 oC TC = 125 oC Forward Current, I F [A] TC = 25 oC 70 100 200 300 400 500 600 0.01 10 0.1 1 10 100 TC = 125 oC TC = 25 oC TC =75 oC Reverse Current, I R [ μ A ] Reverse Voltage, VR [V] 30 0.1 1 10 100 60 90 120 150 180 Typical Capacitance at 0V = 180 pF Capacitances, Cj [pF] Reverse Voltage, VR[V] 20 100 200 300 400 500 600 30 40 50 60 IF = 15A TC = 25 oC TC = 75 oC TC = 125 oC Reverse Recovery Time, T rr [ns] 025 50 75 100 125 150 10 20 30 40 50 Average Forward Current, I F(AV) [A] Case temperature, TC [oC] DC 1 100 200 300 400 500 600 2 3 4 5 6 7 TC = 125 oC TC = 25 oC TC = 75 oC Reverse Recovery Current, I rr [A] diF/dt [A/μs] I F = 15A ?2007 Fairchild Semiconductor Corporation FFP15S60S Rev. C1 Forward V oltage, V F [V ] Figure 5. Typical Junction Capacitance diF/dt [A/μs] Fig ure 8. For ward Current Derating Curve |